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Experimental consideration on single phase regions at 1800 ?Cin Mo-rich portion of Mo-Si-B phase diagram

机译:1800年单相区对单相区的实验考虑因素Mo-Si-B相图的富含富型部分

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For the Mo-Si-B system, the phase diagrams published so far are only at 1600 ° C. Nowotny et al. first reported the phase diagram in 1957. Some replacements were performed by Perepezko and his coworkers in 1997 and 2006. However, there are some differences between them, especially near the region of Mo_5SiB_2, so-called T_2 phase. T_2 single phase region in the Perepezko's has a B-richer composition than that in the Nowotny's. However, there is a need for a new phase diagram at higher temperature with the requirement of phase stabilization above 1600 ° C for the turbine blade application of Mo-Si-B system. It was observed in our previous studies on the Mo-Si-B system that drastic microstmcture development occurred through heat treatment at 1800 °C for 24 h. Therefore, the purpose of this work is to experimentally investigate single phase regions at 1800 ° C in the Mo-rich portion of the Mo-Si-B phase diagram compared with the phase diagram at 1600 ° C.
机译:对于Mo-Si-B系统,到目前为止发布的相图仅在1600°C.Noyotny等人。首先报告了1957年的相图。一些替换由Perepezko和他的同事于1997年和2006年进行。但是,它们之间存在一些差异,特别是在Mo_5sib_2,所谓的T_2阶段附近。 PEREPEZKO中的单相区域具有比诺本质的B-richer组合物。然而,需要在较高温度下进行新的相位图,其需要高于1600℃的相位稳定,用于Mo-Si-B系统的涡轮机叶片。在我们以前的研究中观察到关于Mo-Si-B系统的研究,可通过在1800℃下通过热处理发生在1800℃的24小时中发生激烈的微观型发育。因此,该作品的目的是在Mo-Si-B相图的Mo-B富型的Mo-Si-B相的富含部分在1600℃下进行实验地研究单相区域。

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