Simple Planar Structure Hydrogen Gas Sensor Device with Large Response

摘要

Hydrogen gas sensor device with simple planar structure based on silicon was fabricated only by using a lift-off technique of an evaporated metal film. The device consists of ohmic source and drain electrodes and platinum Schottky gate electrode. This sensor device has a little similar property as FET. Current-voltage characteristics between the source and drain of the device are sensitive to hydrogen gas. The voltage differnce between in hydrogen ambient and oxygen ambient is about 2.3 volts for a constant current of 0.9mA. The device is also sensitive to hydrogen in air. Electrons flow in the buried channel formed between the gate electrode and the pn junction. It was confirmed that the gate bias influences the properties.