首页> 外文会议>Meeting,Division of Polymeric Material: Science and Engineering American Chemical Society >High organic group content periodic mesoporous organosilicas for low k microelectronics applications.
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High organic group content periodic mesoporous organosilicas for low k microelectronics applications.

机译:高有机群含量周期介孔有机硅,用于低K微电子应用。

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Interconnects between increasingly dense packed devices on microchips must be insulated from each other by improved performance insulators to overcome the RC time constant problem and avoid current leakage. This can be achieved by replacing currently used dense silica by nanoporous silica to decrease the dielectric constant k and hence improve the insulating abilities. However, inorganic silica shows a high affinity to water, which is a strongly limiting factor regarding the low k properties. Further improvements can be achieved by the incorporation of hydrophobic organic groups into the material, which can also serve to improve the mechanical properties.
机译:通过改进的性能绝缘体,微芯片上越来密集的包装设备之间的互连必须通过改进的性能绝缘体克服RC时间常数问题并避免电流泄漏。这可以通过纳米多孔二氧化硅替换当前使用的致密二氧化硅来实现,以降低介电常数k并因此提高绝缘能力。然而,无机二氧化硅对水显示出高亲和力,这是关于低k特性的强烈限制因素。通过将疏水有机基团掺入材料中,可以进一步改善,这也可以用于改善机械性能。

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