ACCURATE MODELING OF COPPER PRECIPITATION KINETICS INCLUDING FERMI LEVEL DEPENDENCE

摘要

Copper is one of the most important contaminants for silicon electronics, and it has detrimental effects on device performance if present in active regions. In this work, we investigate copper precipitation models that provide the foundation for simulating copper diffusion and precipitation processes in silicon. These models are verified by comparison to experimental measurements from Flink et al. [1, 2].