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METHOD FOR CALCULATING FERMI LEVEL DEPENDENCE OF IMPACT IONIZATION PROBABILITY

机译:碰撞电离概率的费米水平依赖度的计算方法

摘要

PROBLEM TO BE SOLVED: To provide a high-speed calculation method of impact ionization probability depending on the position of the Fermi level. ;SOLUTION: Impact ionization probability, when the Fermi level is fixed to one point in a valence band or a conduction band, is calculated. The energy distribution of electrons after dispersion, when the Fermi level is fixed to one point by using random phase approximate and the energy distribution of electrons, after dispersion in the desired Fermi level are calculated. Then, respective integration values are obtained. Impact ionization probability in the desired Fermi level is obtained by multiplying impact ionization probability which is strictly calculated by the ratio of the integration value of the energy distribution of the electrons after dispersion.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:根据费米能级的位置提供一种高速计算碰撞电离概率的方法。 ;解决方案:计算当费米能级固定在价带或导带中的一个点时的碰撞电离概率。当通过使用随机相位近似将费米能级固定到一个点时,分散后电子的能量分布,以及以所需费米能级分散后计算电子的能量分布。然后,获得各个积分值。所需电费米能级的碰撞电离几率是通过将碰撞电离几率乘以严格计算得出的结果得出的,该碰撞电离几率乘以分散后电子的能量分布的积分值之比。

著录项

  • 公开/公告号JP2002353435A

    专利类型

  • 公开/公告日2002-12-06

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20010159992

  • 发明设计人 EZAKI TATSUYA;

    申请日2001-05-29

  • 分类号H01L29/00;H01L21/336;H01L29/78;

  • 国家 JP

  • 入库时间 2022-08-22 00:12:16

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