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XRD, HRTEM AND FIB-SIMS STUDY OF INTERFACES IN TiN/Cu MULTILAYERED THIN FILMS

机译:XRD,HRTEM和FIB-SIMS在锡/ Cu多层薄膜中的界面研究

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This paper reports on the characterization of the interfaces in TiN/Cu multilayered thin films. The films were deposited by dual ion beam sputtering with modulation periods (A) ranging from 5 to 50 nm. X-ray diffraction provided information on the global multilayer structure, revealing a [002]-out-of-plane texture. High Resolution Transmission Electron Microscopy showed the presence of several interfacial and growth defects, such as misfit dislocations and micro-twins, formed to relax the huge misfit (15.9 percent) between the two fee lattices, and a cube-on-cube epitaxial growth, with semi-coherent interfaces. The presence of a growth front facetted morphology in Cu is revealed, leading to lateral interfacial roughness and fluctuations in the interplanar spacings. Ultimately, by Focused Ion Beam Secondary Ion Mass Spectrometry preliminary depth profiles were obtained with the aim to gain a comprehensive picture of the interfacial properties in terms of interface roughness and elemental distribution at the interfaces.
机译:本文报告了锡/铜多层薄膜界面的表征。通过双离子束溅射沉积膜,其调节周期(a)范围为5至50nm。 X射线衍射提供了关于全局多层结构的信息,揭示了平面纹理的[002]。高分辨率透射电子显微镜显示出存在若干界面和生长缺陷,例如错配脱位和微双胞胎,形成为在两种费用格子之间放宽巨大的错量(15.9%),以及立方体对立方体外延生长,具有半相干界面。揭示了Cu中的生长前围攻形态的存在,导致横向界面粗糙度和平面间距的波动。最终,通过聚焦离子束二次离子质谱法获得初步深度曲线,其目的是在接口粗糙度和元素分布方面获得界面性质的综合图像。

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