首页> 外文会议>the International Symposium of Electrochemical Society >SCALING ISSUES FOR ADVANCED SOI DEVICES: GATE OXIDE TUNNELING, THIN BURIED OXIDE, AND ULTRA-THIN FILMS
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SCALING ISSUES FOR ADVANCED SOI DEVICES: GATE OXIDE TUNNELING, THIN BURIED OXIDE, AND ULTRA-THIN FILMS

机译:高级SOI设备的缩放问题:栅极氧化术隧道,薄层覆盖氧化物和超薄薄膜

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The future trends of SOI MOSFETs and the critical issues related to their miniaturization are addressed. The scaling of the gate oxide in Partially Depleted SOI devices and its impact on the floating body effects is discussed based on extensive measurements and simulations. Special dimensional and time-related mechanisms (transient current, history effects, and low frequency noise) are described. The impact of thin buried oxide is analyzed in terms of short-channel effects and self-heating. Ultra-thin films are requested for achieving aggressive performance and scaling. Our data in sub-15 nm films reveal unusual coupling effects. The bias conditions for optimum single-gate and double-gate operation are investigated.
机译:解决了SOI MOSFET的未来趋势和与其小型化相关的关键问题得到了解决。基于广泛的测量和模拟,讨论了部分耗尽的SOI器件中的栅极氧化物的缩放及其对浮体效果的影响。描述了特殊尺寸和时间相关机制(瞬态电流,历史效果和低频噪声)。在短信道效应和自加热方面分析了薄层掩埋氧化物的影响。要求超薄薄膜实现积极的性能和缩放。我们在Sub-15 NM电影中的数据显示出异常的耦合效果。研究了最佳单栅极和双栅操作的偏置条件。

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