Nanocrystalline copper/hydrogenated amorphous carbon (nc-Cu/a-C:H) films have been deposited on Si substrates by a microwave plasma-enhanced chemical vapor deposition process combined with a sputter deposition process. The deposition rate of films was found to vary in the range of 15 to 25 nm/min depending on the composition of argon-methane mixtures. These films were analyzed by Rutherford backscattering spectroscopy and Raman spectroscopy. The crystallographic structure, nanohardness, and friction coefficient of films were investigated as functions of the carbon content.
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