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Evaluation of residual stress in MEMS structures by Digital Holography

机译:数字全息术评估MEMS结构中的残余应力

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We investigate digital holography method as metrological tool for inspection and characterization of MEMS structures. The efficiency of the digital holography is demonstrated measuring out of plane deformations due to the intrinsic residual stress. Microstructures under investigation are of two different types: the first are made of a single polysilicon layer, whereas the second are bimorph structures with a thin silicon nitride layer over the polysilicon one. These structures exhibit an out-of-plane deformation owing to residual stresses between the different layers. The characterization of these deformations is instrumental to study and understand the effect of residual stress on the deformation of the single microstructures. To this aim digital holography has been applied as metrological tool in order to obtain the profile of the microstructures. These data are employed in analytical and numerical model to evaluate residual stress inside the investigated structures. Moreover, digital holography has been employed to evaluate MEMS behaviour when subjected to thermal load. Profile of cantilevers, with dimensions from 1 to 50 μm, has been measured.
机译:我们调查数字全息方法作为MEMS结构检查和表征的计量工具。由于固有的残余应力,证明了数字全息术的效率测量了平面变形。正在研究的微观结构是两种不同的类型:首先是由单个多晶硅层制成,而第二种是在多晶硅上用薄的氮化硅层具有双芯片结构。由于不同层之间的残余应力,这些结构表现出外平面变形。这些变形的表征是有助于研究和理解残余应力对单个微结构变形的影响。对于此目的,数字全息术已被应用为Metrologologology工具,以便获得微结构的轮廓。这些数据用于分析和数值模型中,以评估研究结构内的残余应力。此外,已经采用数字全息术在经受热负荷时评估MEMS行为。悬臂剖面,尺寸为1至50μm,已经测量。

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