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COMPARISON OF PHOTOVOLTAIC PERFORMANCE OF SnO_2:F COATED SUBSTRATES MADE USING APCVD WITH DIFFERENT Sn PRECURSORS

机译:SnO_2的光伏性能比较:F涂层基材用不同Sn前体制成的涂覆基材

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Various textured SnO_2:F coated substrates, made using APCVD with different Sn precursors, have been evaluated to assess their suitability as superstate window electrodes for amorphous silicon based solar cells. The Sn precursors used were tetramethyltin (TMT), monobutykin trichloride (MBTC), and tin tetrachloride (TTC). The performance of these substrates was compared to the high quality world "standard" SnO_2:F as produced by Asahi Glass Company (Asahi "U" type). Results show that the use of TMT leads to low generated current density, which is related to the comparatively low optical scattering performance, and overall low photovoltaic performance. MBTC leads to quite uniform performance, but with a limited fill factor and current density. The use of TTC results in the highest conversion efficiency levels in solar cells, approaching those obtained with Asahi U type substrates.
机译:已经评估了使用具有不同Sn前体的APCVD制造的各种纹理的SnO_2:F涂覆的基板,以评估它们的适用性,以巨大的基于非晶硅太阳能电池的封闭窗电极。使用的Sn前体是四甲基锡(TMT),单组织三氯化锡(MBTC)和四氯化锡(TTC)。将这些基板的性能与由Asahi Glass Company(Asahi“U”类型)产生的高质量世界“标准”Sno_2:F进行比较。结果表明,使用TMT导致低产生的电流密度,与相对低的光散射性能相关,以及整体低光伏性能。 MBTC导致相当均匀的性能,但具有有限的填充因子和电流密度。 TTC的使用导致太阳能电池的最高转换效率水平,接近用Asahi U型衬底获得的那些。

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