Temperature-Dependent Electrical Characteristics of Low Temperature a-Si: H TFTs Fabricated on Plastic Substrate

摘要

Low temperature deposited a-Si:H TFTs have been successfully fabricated on colorless polyimide (CPI) substrate for flexible display applications. A serious degradation of threshold voltage was observed after applying external thermal stress. The Si-based TFTs become more stable after applying several thermal stress cycles. The a-Si:H TFT backplane fabricated at 160°C on PI substrate has been successfully fabricated and demonstrated for 4.1" QVGA AMLCD.