Mid infrared InP-based photodiodes operating at/near room temperature

摘要

This research aims to develop InP-based devices as alternative for MWIR detection. The approach pursued is a type-II superlattice consisting GaInAs and GaAsSb alloys. These structures provide two advantages for MWIR detection: large (greater than 700 meV) direct band-gaps, which should lead to a lower thermal carrier generation rate and the ability to adjust the detection wavelength by changing the compositions of GaInAs and GaAsSb and their thickness, in the superlattice.