Misfit dislocations in epitaxial Ni/Cu bilayer and Cu/Ni/Cu trilayer thin films

摘要

Misfit dislocations at the interfaces of bilayer (Ni/Cu) and trilayer (Cu/Ni/Cu) thin films were examined by plan-view transmission electron microscopy (TEM). In the bilayers, the spacing of misfit dislocations was measured as a function of Ni layer thickness. The critical thickness, at which misfit dislocations start to appear with the loss of coherency, was found to be between 2 and 5 nm. The spacing of the misfit dislocations decreased with increasing Ni layer thickness and reached a plateau at the thickness of 30 nm. The minimum spacing is observed to be about 20 nm. A g·b analysis of the cross-grid of misfit dislocations revealed 90° Lomer dislocations of the <110>{001} type lying in the (001) interface plane at a relatively large thickness of the Ni layer, but 600 glide dislocations of the <110>{111} type at a relatively small thickness of the Ni layer. In the trilayers, misfit dislocations formed at both interfaces. The spacing of the misfit dislocation is in agreement with that of the bilayers with a similar Ni layer thickness. The misfit dislocation arrays at the two interfaces, having the same line directions, are 60° dislocations with edge components with opposite signs but are displaced with respect to each other in the two different interface planes. This suggests that interactions of the strain fields of the dislocations have a strong influence on their positions at the interface.