首页> 外文会议>Symposium on influences of interface and dislocation behavior on microstructure evolution >Dislocation - Grain Boundary Interaction in Nickel Bicrystals Evolution of the Resulting Defects under Thermal Treatment
【24h】

Dislocation - Grain Boundary Interaction in Nickel Bicrystals Evolution of the Resulting Defects under Thermal Treatment

机译:热处理下所得缺陷的镍双晶体中的脱位 - 晶界相互作用

获取原文

摘要

The interactions between lattice dislocations and grain boundaries were studied in nickel bicrystals. Three types of grain boundaries, according to their energy, were investigated : singular Σ3 {111}, vicinal near Σ11 {311} and general near Σ11 {332} grain boundaries. The experiments were performed by transmission electron microscopy using a set of techniques : conventional, weak beam, in situ and high resolution transmission electron microscopy. Dislocation transmission from one crystal to the other was only observed for Σ3 {111} GB. It consists in a decomposition within the grain boundary of the trapped lattice dislocation followed by the emission of one partial in the neighbouring crystal. A high resolved shear stress is required to promote the emission process. Most often, the absorbed lattice dislocations or extrinsic grain boundary dislocations react with the intrinsic dislocation network giving rise to complex configurations. The evolutions with time and upon thermal treatment of these configurations were followed by in situ transmission electron microscopy. The evolution processes, which differ with the type of grain boundaries, were analyzed by comparison with the existing models for extrinsic grain boundary dislocation accommodation. They were tentatively interpretated on the basis of the grain boundary atomic structures and defects obtained by high resolution transmission electron microscopy studies.
机译:研究了晶格脱位和晶界之间的相互作用在镍双晶中研究。研究了三种类型的晶界,根据它们的能量进行了调查:奇异σ3{111},附近σ11{311}附近σ11{332}晶界的一般。通过使用一组技术:常规,弱光束,原位和高分辨率透射电子显微镜进行透射电子显微镜进行实验。仅针对Σ3{111} GB观察到从一个晶体到另一个晶体的位错传递。它包括在捕获的晶格位错的晶界内的分解,然后在相邻晶体中发射一个部分。需要高分辨率的剪切应力来促进排放过程。最常见的是,吸收的晶格脱位或外部晶界脱位与产生复杂配置的内在位错网络反应。随着时间和热处理这些配置的时间和在原位透射电子显微镜下进行的演变。通过与现有模型进行比较,分析了与晶界类型不同的进化过程,用于对外部晶粒边界位错应对的现有模型进行分析。它们是根据高分辨率透射电子显微镜研究获得的晶界原子结构和缺陷的初步解释。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号