Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology

摘要

Short-period superlattices consisting of nanocrystalline Si wells and amorphous SiO_2 barriers were analyzed using various structural (transmission electron microscopy, atomic force microscopy, and x-ray diffraction) and optical (Raman scattering and spectroscopic ellipsometry) characterization techniques. We observe parallel layers containing polycrystalline Si wells, primarily with <111> orientation, and an interesting surface morphology due to sputtering damage. Raman spectra show a redshift and broadening due to finite-size effects. The ellipsometry data can be described using the effective medium approximation (since the superlattice period is much shorter than the wavelength of the optical excitation) or a superlattice approach based on the Fresnel equations with a polycrystalline Si dielectric function.