Intrinsic Resistive Switching in Bulk SiOx Films

摘要

We report a study of resistive switching in a.silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. Both unipolar and bipolar programming is demonstrated.