Study of Microstructural Defects Induced by Thermal Stresses at SIC/AL Interfaces in Metal Matrix Composites

摘要

The residual lattice strain, the distribution function of the crystallite size, the components of Gaussian and Chauchy functions of the X-ray line profiles obtained by Fourier analysis are correlated with AFM and TEM observations for a better knowledge of the dislocation generation mechanisms at the SiC/Al interface after quenching at low temperature. The results are discussed taking into account the different types of the reinforcing phase (SiC whisker, SiC particles), the thermal stresses induced by rapid cooling, due to low temperature quenching, and the presence of a high concentration of point defects (vacancies) generated by quenching treatments.