Characterization of Chalcogenide Glasses for Optoelectronics

摘要

Chalcogenide glasses -Ge_25Ga_10S_65, Ge_25Ga_5As_5S_65, As_2S_3; As_2S_2Se, As_2Se_3-have been synthesized and doped with ions of rare earth RE~3+, in the concentration range of 500 to 6000 wt.ppm. Special processing makes possible to reduce the hydroxyle content and to incorporate rare earth ions without phase separation. Various physical measurements, including photoluminescence have been implemented. Main observations and results may be summurized as follows: -OH group cocnentration could be lowered below 5x10~(-5) mol.