Electrochemical Deposition of Manganese and Copper-Manganese Alloy on Silicon

摘要

In this paper, we report on the electrochemical deposition of manganese and copper-manganese alloy on silicon from sulfate solutions with and without complexing agents. We show that the composition of copper-manganese films deposited on n-type (100) silicon can be controlled using different deposition parameters and bath compositions. Manganese was deposited on p-type (100) silicon only from the most basic solutions, containing no copper and complexing agents.