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Study of TaSi_2-Si Crystals with High Energy Synchrotron Radiation as Tunable Wide-bandpass Monochromator and Analyzer Optics

机译:用高能同步辐射辐射的Tasi_2-Si晶体研究可调宽带式单色器和分析仪光学

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Single crystals of the in situ composite TaSi_2-Si are candidates for wide bandpass monochromators and analyzers for x-ray experiments. Two large crystals (32 x 39 x 7mm~3 and 32 x 39 x 30mm~3) were studied in detail using 115keV synchrotron radiation at the BESSRC beamline at the APS. For transmission geometry, the Si(111) reflection and 39mm crystal thickness, rocking curve widths of 95 arc sec with reflectivities of 50% were measured over the entire crystal. Turning the crystal to an angle of 45° to the incident beam and translating it through the beam allowed investigation of the influence of crystal thickness on diffracted intensity. For sample thicknesses ranging between 5mm and 12.5mm, the full width at half maximum (FWHM) of the rocking curve increased linearly from 29 arc sec to 53 arc sec. The greatest gain in integrated intensity was obtained for 8-9mm thickness where FWHM = 40 arc sec. If this crystal were used as a monochromator for synchrotron radiation, it would provide 40 times more intensity than a perfect silicon crystal and an energy bandwidth of 1keV at 115keV photon energy. With the increase of the rocking curve FWHM, a plateau across the peak maximum developed; its width increased from 5 arc sec to 25 arc sec when the crystal thickness increased from 5mm to 12.5mm, respectively. This plateau allows these crystals to be used as analyzer crystals in diffraction experiments, i.e., as very narrow slits to suppress background. A plateau width of about 5-20 arc sec for the analyzer crystal is needed to insure that the entire intensity scattered from a sample is delivered to the detector. The simple expedient of changing the crystal thickness alters the plateau width of the analyzer crystal and tunes its acceptance to the needs of the sample under study.
机译:原位复合Tasi_2-Si的单晶是宽带通道单色器和分析仪的候选者,用于X射线实验。在APS的Bessrc Beamlin线上使用115kev同步辐射详细研究了两个大晶体(32×39×7mm〜3和32×39×30mm〜3)。对于传输几何形状,在整个晶体上测量Si(111)反射和39mm晶体厚度,95个弧形秒的摇摆曲线宽度为50%的反射率。将晶体转变为45°的角度到入射光束并通过光束转换它允许调查晶体厚度对衍射强度的影响。对于5mm和12.5mm之间的样品厚度,摇摆曲线的半最大(fwhm)的全宽度从29弧线秒到53弧形秒增加。获得了8-9mm厚度的集成强度的最大增益,其中FWHM = 40弧秒。如果将该晶体用作同步辐射的单色器,则它将提供比完美的硅晶体更高的强度和115kev光子能量的1KeV的能量带宽。随着摇摆曲线FWHM的增加,在最大峰值上产生的高原;当晶体厚度增加到5mm至12.5mm时,其宽度从5弧至25弧秒增加到25弧子。该高原允许这些晶体用作衍射实验中的分析仪晶体,即,作为抑制背景的非常窄的狭缝。需要一个用于分析仪晶体的约5-20弧秒的平台宽度,以确保从样品散射的整个强度被输送到探测器。改变晶体厚度的简单方便改变了分析仪晶体的平台宽度,并在研究下调整其对样品的需要的验收。

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