In situ gas-phase optical measurements of silane decomposition in a thermal chemical vapor deposition reactor

摘要

Gas phase processes occurring during silicon chemical vapor deposition via silane thermal decomposition were investigated. Raman spectroscopy was utilized to measure gas-phase temperatures and species concentrations while elastic light scattering was utilized to probe gas-phase particle nucleation and transport. The process parameters investigated were a substrate temperature of 1100 K, a chamber pressure of 26.7 kPa (200 torr), a gas flow rate of 19 L/min, and substrate rotation rates of 500 rpm and 1000 rpm. A strong correlation was observed between the gas-phase temperature and both silane concentration and particle light scattering intensity.