A comparative study on electroluminescence from C-containing silicon oxide and Si-containing silicon oxide films

摘要

C-containing silicon oxide (CSO) and Si-containing silicon oxide (SSO) films were deposited using the RF magnetron sputtering technique with a C-SiO_2 and a Si-SiO_2 composite target, respectively. The Au/CSO/p-Si and Au/SSO/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both of the Au/CSO/p-Si and Au/SSO/p-Si structures have rectifying behavior. All the EL spectra from the two types of the structures have peak positions around 650-660nm (～1.9eV). The EL mechanisms for the Au/CSO/p-Si and Au/SSO-p-Si structures have been discussed.