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Focal Plane Arrays from UV up to VLWIR

机译:从uv到vlwir的焦平面阵列

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Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related Ⅲ-Ⅴ compounds, at the Alcatel-Thales-Ⅲ-Ⅴ^sLab (formerly part of THALES Research and Technology Laboratory). In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the HI-V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multispectral detection. In this presentation, we give the status of our LWIR QWIP production line, and also the current status of QWIPs for MWIR (< 5μm= and VLWIR (>15μm) arrays.As the QWIP technology cannot cover the full electromagnetic spectrum, we develop other semiconductor compounds for SWIR and UV applications. We present here the status of our first FPA realization in UV with GaN alloy, and at 1.5μm with InGaAs photodiodes.
机译:自2002年以来,基于Alcatel-Thales-Ⅲ-ⅴ^平板(以前的题位研究和技术实验室的一部分),基本组一直是使用基于GaAs和相关Ⅲ-β化合物的QWIP技术制造敏感阵列。在过去的研究人员中声称QWIPS的许多优势。均匀性是其中之一,并且是生产开始的关键参数。 QWIPS的另一个广泛声明的优势是所谓的带隙工程和高V处理的多功能性,允许量子结构的定制设计来满足特定应用的要求,例如非常长的波长(VLWIR)或多光谱检测。在本演示文稿中,我们提供了我们的LWIR QWIP生产线的状态,以及MWIR的QWIPS的当前状态(<5μm=和vlwir(>15μm)arrays.as,QWIP技术无法涵盖全电磁谱,我们开发其他SWIR和UV应用的半导体化合物。我们在此提供我们的第一个FPA在UV与GaN合金中实现的状态,并在1.5μm与InGaAs光电二极管。

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