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Focal Plane Arrays from UV up to VLWIR

机译:紫外至VLWIR的焦平面阵列

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Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related Ⅲ-Ⅴ compounds, at the Alcatel-Thales-Ⅲ-Ⅴ Lab (formerly part of THALES Research and Technology Laboratory). In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the HI-V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multispectral detection. In this presentation, we give the status of our LWIR QWIP production line, and also the current status of QWIPs for MWIR (< 5μm= and VLWIR (>15μm) arrays.As the QWIP technology cannot cover the full electromagnetic spectrum, we develop other semiconductor compounds for SWIR and UV applications. We present here the status of our first FPA realization in UV with GaN alloy, and at 1.5μm with InGaAs photodiodes.
机译:自2002年以来,THALES集团一直在Alcatel-Thales-Ⅲ-Ⅴ实验室(以前是THALES研究与技术实验室的一部分)中使用基于GaAs和相关Ⅲ-Ⅴ化合物的QWIP技术制造敏感阵列。过去,研究人员声称QWIP具有许多优势。均匀性是其中之一,并且已成为开始生产的关键参数。 QWIP的另一个广为人知的优势是所谓的带隙工程和HI-V处理的多功能性,允许定制的量子结构设计满足特定应用的要求,例如超长波长(VLWIR)或多光谱检测。在本演示中,我们将介绍LWIR QWIP生产线的状态,以及MWIR(<5μm=和VLWIR(>15μm)阵列的QWIP的现状。由于QWIP技术无法覆盖整个电磁频谱,因此我们开发了其他用于SWIR和UV应用的半导体化合物我们在此介绍了GaN合金在UV中首次实现FPA的状态,以及InGaAs光电二极管在1.5μm下实现FPA的状态。

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