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Array pattern synthesis with null field constraints in the near-field region

机译:近场区域中的Null字段约束的数组模式合成

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Many of the available array synthesis procedures require the prescription of bath amplitude and phase of the sought pattern and therefore can be labelled as field synthesis procedures, in contrast to the power synthesis ones, in which Only the field amplitude is prescribed. If the array is formed by equal elements with a fixed geometry, only the excitations must be determined. Aim of this work is to find an efficient solution to the array power synthesis involving null field constraints in the near-field (NF) region. The null field constraints in near-field are introduced in the synthesis process to avoid the interaction between the array and the surrounding environment and to prevent electromagnetic (em) compatibility troubles. In a recent mock [1], the solution of the considered problem was found as intersection between a subset of the set B of all far-field patterns which can be radiated by the array and the set M of all functions fulfilling the patters requirements. The alternating projection method was employed to this end in analogous way as in [2]. In particular, in [1] the null field constraints in the volume were imposed at the sampling points fixed according to the results relevant to the 3-D sampling representations of em fields. This allowed a considerable reduction of their number with respect to the classical λ/2 spacing. Now the null field constraints are imposed on the spherical surface enclosing the considered volume (see Fig. 1). In fact, as a consequence of the uniqueness theorem, if the tangential components of the em field on a closed surface external to the sources are zero, the field is null in the enclosed volume. It is clear that the number of constraints can be remarkably reduced by imposing the annulment of the field tangential components at the sampling points fixed by the nonredundant field representation on a spherical surface external to the sources [3].
机译:许多可用的阵列合成程序所需要的要求图案的浴振幅和相位的处方,因此可以被标记为场的合成方法,在此相反的动力合成的,其中只有场振幅被规定。如果阵列是通过用一个固定的几何形状相同的元件形成,仅激励必须被确定。这项工作的目的是寻找一种高效的解决方案在近场(NF)区域的阵列功率合成涉及空场约束。在近场的空场约束在合成过程中引入,以避免阵列和周围环境之间的相互作用,并防止电磁(EM)的相容性的烦恼。在最近的模拟[1],所考虑的问题的解决方案被发现为可以由阵列和履行patters要求的所有功能集合M被辐射的所有远场模式的集合B的一个子集之间的交集。交替投影方法采用为此在类似的方式如在[2]。特别是,在[1]中的体积的空场约束以定采样点根据相关的3-d的结果采样表示的EM场施加。这使得相对于经典的λ/ 2间距的显着降低它们的数量的。现在空字段约束球形表面包围所考虑的体积上施加(参照图1)。事实上,作为唯一性定理的结果,如果在封闭的表面外部的源的EM场的切向分量为零,则字段为空在封闭容积。清楚的是,可以通过在在球形表面上外部源[3]通过固定非冗余字段表示采样点施加场切向分量的废止显着减少的约束的数目。

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