Ultra High Speed, Very Low Power InSb-based Quantum Well FETs for Logic Applications

摘要

Indium antimonide (InSb) shows great promise as an ultra-fast, truly low power digital logic technology as it has the largest electron mobility, saturation velocity and ballistic length of any known semiconductor (Table 1). This performance can be accessed at room temperature using Extractive (minority carrier exclusion and extraction) technology, which mitigates the effect of the narrow bandgap on device leakage and breakdown.