首页> 外文会议>American Ceramic Society >Flux-pinning of Bi_2Sr_2CaCu_2O_(8+δ) high T_c superconducting tapes utilizing (Sr, Ca)_(14) Cu_(24)O_(41+δ) and Sr_2CaAl_2O_6 defects
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Flux-pinning of Bi_2Sr_2CaCu_2O_(8+δ) high T_c superconducting tapes utilizing (Sr, Ca)_(14) Cu_(24)O_(41+δ) and Sr_2CaAl_2O_6 defects

机译:Bi_2SR_2CACU_2O_(8 +Δ)高T_C超导磁带使用(SR,CA)_(14)CU_(24)O_(41 +Δ)和SR_2CAAL_2O_6缺陷

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Efforts to improve the magnetic flux-pinning properties of Bi_2Sr_2CaCu_2O_(8+δ)/Ag (2212/Ag) tape conductors utilizing (Sr_(1-x)Ca_x)_(14)Cu_(24)O_(41+δ) and Sr_2CaAl_2O_6 defects are described. Precursor powders with composition (2212 + N% volume fraction Sr_(10)Ca_4Cu_(24)O_(41+δ); N = 0, 7, 15) were prepared by solid-state reaction to obtain subsolidus phase equilibrium at 860 °C, as measured by X-ray diffraction (XRD). Nanophase (15 ± 5 nm) Al_2O_3 was added (1.1% mass fraction) to N = 0 and 15 fully reacted powders. Brush-on coated tapes (13 μm to 17 μm 2212 thickness) were processed by a partial-=melt growth method in air with variable melting from 865 °C to 890 °C, and slow-cool recrystallization from 856 °C to 847 °C. The effect of different melt temperatures and compositions on film properties (phase assemblages, orientations, and compositions, and defect sizes) was studied by XRD, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). Higher N increased the amount of (Sr_(1-x)Ca_x)CuO_(2+δ) and (Sr_(1-x)Ca_x)_(14)Cu_(24)O_(41+δ) defects observed in processed films. Addition of 1.1% mass fraction Al_2O_3 for N = 0, 15 powders and melt temperatures 870 °C to 900 °C had two main effects: (1)Al_2O_3 reacted within ≤ 0-4 minutes of melting to produce defects with primary composition Sr_2CaAl_2O_(6+δ), as verified by XRD and EDS, and (2) dramatically shifted the phase assemblages toward increasing (Sr_(1-x)Ca_x)_(14)Cu_(24)O_(41+δ) and decreasing (Sr_(1-x)Ca_x)CuO_(2+δ) defects. The Sr_2CaAl_2O_6 defects increased to (1-5) μm size by coarsening with increasing melting temperatures ≈ (880 to 895) °C. Magnetic critical current density (J_c) of (N = 15 + alum powder) tapes showed improvement for 1T applied fields in the (20 to 30) K range. Transport J_c (4.2 K, OT) of N = 15 and N = 15 + alum composition tapes were ≈ 30% and ≈ 5%, respectively, of N = 0 TAPES.
机译:努力改善Bi_2Sr_2CaCu_2O_的(8 +δ)/银的磁通钉扎性能(2212 / Ag)的利用(SR_(1-X)Ca_x)胶带导体_(14)CU_(24)O_(41 +δ)和Sr_2CaAl_2O_6缺陷进行描述。前体与组合物(2212 + N%体积分数SR_(10)Ca_4Cu_(24)O_(41 +δ); N = 0,7,15)粉末是通过固态反应制备的在860,得到亚固相相平衡℃下如通过X射线衍射(XRD)测量。纳米(15±5纳米)Al_2O_3的溶液中加入(1.1%质量分数)为N = 0和15完全反应的粉末。刷上涂布条带(13微米至17微米的厚度2212)通过一个partial- =处理熔融生长法在空气中具有可变熔点从865℃至890℃,和缓慢凉爽重结晶从856℃至847° C。通过XRD研究了不同的熔融温度和组成对膜特性(相组合,方向,和组合物,和缺陷大小)的效果,扫描电子显微镜(SEM),和能量色散谱(EDS)。高N增加在处理膜中观察到的(SR_(1-X)Ca_x)CuO_(2 +δ)和(SR_(1-X)Ca_x)_(14)CU_(24)O_(41 +δ)的缺陷的量。 1.1%质量分数为Al_2O_3的N = 0,15成粉末的添加和熔体温度870℃〜900℃有两个主要作用:(1)≤Al_2O_3的0-4分钟熔化的内反应,以与初级组合物Sr_2CaAl_2O_产生缺陷( 6 +δ),如通过X射线衍射和EDS,并验证(2)显着地错开相位组合朝向增加(SR_(1-X)Ca_x)_(14)CU_(24)O_(41 +δ)和降低(SR_ (1-X)Ca_x)CuO_(2 +δ)的缺陷。所述Sr_2CaAl_2O_6缺陷通过随熔融温度≈(880〜895)℃的粗大化增加至(1-5)微米尺寸。磁临界电流密度的(J_c)(N = 15 +明矾粉末)磁带表明改进1T在(20〜30)K范围应用领域。运输J_c(4.2 K,OT)的N = 15和N = 15 +明矾组合物磁带是≈30%和5≈%,分别N = 0的磁带。

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