Development on Original End Point Detection utilizing eddy current variation by Skin Effect in Chemical Mechanical Polishing

摘要

An original end point system was developed by making use of skin effect in CMP (Chemical Mechanical Polishing). The developed system utilizes a drastic variation of eddy current generated by critical change whether magnetic flux penetrates a conductive film or not due to skin effect. In case of copper CMP, a prominent local maximum point of eddy current emerges just before eliminating the copper film. It was demonstrated that the developed system is one of robust end point system under actual CMP condition.