首页> 外文会议>Meeting of the Electrochemical Society >In-Situ SCANNING TUNNELING MICROSCOPY STUDIES OF ELECTROCHEMICAL ATOMIC LAYER EPITAXY: FLOW CELL STM OF THE FORMATION OF CdS AND CdSe
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In-Situ SCANNING TUNNELING MICROSCOPY STUDIES OF ELECTROCHEMICAL ATOMIC LAYER EPITAXY: FLOW CELL STM OF THE FORMATION OF CdS AND CdSe

机译:原位扫描电化学原子层外延的显微镜研究:Cds和Cdse形成流动细胞STM

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A new flow cell STM has been built in this group and is being used for studies of CdS and CdSe growth by electrochemical atomic layer epitaxy.Studies of the atomic layers formed on Au(111) single crystal surfaces will be described,as well as the alternated deposition of atomic layers of elements to form compound semiconductors.
机译:在该组中建立了一种新的流动单元STM,并且用于通过电化学原子层外延研究CD和CdSe生长。将描述在Au(111)单晶表面上形成的原子层的研究,以及结合的原子层的沉积以形成化合物半导体。

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