In this paper a new model is presented for predicting the phase modulation (PM), and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. The new model correctly predicts the dependence of phase noise on the signal frequency (at a particular carrier offset frequency), explains the noise shaping of the phase noise about the signal frequency, and shows the functional dependence on the transistor parameters, and the circuit parameters. Experimental studies on common emitter (CE) amplifiers have been used to validate the PM noise model at carrier frequencies between 10MHz and 100MHz.
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