首页> 外文会议>Grain Boundary Engineering in Ceramics--From Grain Boundary Phenomena to Grain Boundary Quantum Structures Japan Fine Ceramics Center Workshop >The influence of grain boundaries and interphase boundaries on the creep response of silicon nitride
【24h】

The influence of grain boundaries and interphase boundaries on the creep response of silicon nitride

机译:晶界和间相邻边界对氮化硅蠕变响应的影响

获取原文

摘要

The creep response of single-phase ceramic materials is often controlled by grain boundary diffusion creep processes. In multiphase ceramics such as silicon nitride however, the effect of grain boundaries and interfaces on creep is more complex, but nonetheless pervasive. In this paper I will summarize this behaviour with reference primarily to our own work in recent years.
机译:单相陶瓷材料的蠕变响应通常由晶界扩散蠕变过程控制。然而,在诸如氮化硅的多相陶瓷,然而,晶界和蠕变界面的效果更复杂,但仍然是普遍性的。在本文中,我将在近年来主要参考我们自己的工作,总结这种行为。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号