Production of Raman laser beams using injection-locking technique

摘要

We produced two Raman-laser beams with a frequency offset of 9.2-GHz using a simple injection-locking technique. A slave diode-laser is injection-locked to one of first-order sidebands of a master diode-laser produced by a 9.2 GHz EOM (electro-optic modulator). Using these Raman-laser beams, we observed CPT resonance in a cesium vapor cell.