Low extinction ration and half-wave voltage BOA of GaAs: Analysis and Design

摘要

Improved approach to BOA device of low extinction ration and half-wave voltage has been proposed. The relations between extinction ration, half-wave voltage and electrode have been discussed detailedly with transfer matrix methods. The following conclusions has been made: the electrode width can be optimized to get the lowest half-wave voltage; To gain low extinction ration less than -40dB, the offset of electrode position should be less than 0.3 micron. A BOA device with the extinction ration less than -40dB can be fabricated by a technics named Self-adjustable Technics.