Preparation of Silica Thin Films by Reduction of Aqueous Solution

摘要

Silica (SiO_2 as main component) films have been vigorously used in electronics,optics and surface treatment field,especially as gate insulators,interlayer dielectrics and chip passivation for thin layer of large-scale integration (LSI) circuit,antireflective films on glasses e.g.,cathode ray tube,protecting films of metals from corrosion,of transparent polymer sheets (polycarbonate,polymethylmethacrylate,etc.) and of glasses.Essential preparation methods of silicon dioxide films include thermal oxidation of a silicon substrate,chemical vapor deposition (CVD),reactive sputtering and sol-gel processes.The electrolytic methods in aqueous solutions have several advantages over other techniques because it is performed at atmospheric pressure,at a temperature below 373 K,under low environmental hazard and with a simple and inexpensive apparatus.The main purpose of this work is thus laid in the preparation of silica thin films via potentiostatic electrolysis of an aqueous solution and characterization of them.