UHV-STM Observation of Platinum Silicide Formation Process on Si (111) 7 by 7 Surface;Formation of a Novel Flat Surface in Atomic Order of Pt on Pt_2Si and Its Electrochemical Properties

摘要

The Formation of metal silicides has attracted much attention as a Shottky barrier and an ohmic contact in semiconductor devices.Beside the interest as materials their epitaxial growth processes on Si(111) substrate are significant as fundamental analyses of solid state reaction chemistry and surface chemistry.In previous papers,we successfully observed the surface reaction processes of deposited Pd on a clean Si( 111) 7X7bsubstrate by using the UHV-STM.