首页> 外文会议>Conference on in-line methods and monitors for process and yield improvement >Fatal defect detection from visual abnormalities of logic LSI using IDDQ
【24h】

Fatal defect detection from visual abnormalities of logic LSI using IDDQ

机译:使用IDDQ从逻辑LSI视觉异常检测致命缺陷检测

获取原文

摘要

Abnormal IDDQ (Quiescent VDD supply current) indicates the existence of physical damage in a circuit. Using this phenomenon, a CAD-based fault diagnosis technology has been developed to analyze the manufacturing yield of logic LSI. This method to detect the fatal defect fragments in several abnormalities identified with wafer inspection apparatus includes a way to separate various leakage faults, and to define the diagnosis area encircling the abnormal portions. The proposed technique progressively narrows the faulty area by using logic simulation to extract the logic states of the definition area, and by locating test vector related to abnormal IDDQ, following which fundamental diagnosis way employs the comparative operation of each circuit element to determine whether the same logic state with abnormal IDDQ exists in normal logic state or not.
机译:异常IDDQ(静态VDD电源电流)表示电路中物理损坏的存在。使用这种现象,已经开发了一种基于CAD的故障诊断技术来分析逻辑LSI的制造产量。这种用晶片检测装置识别的若干异常检测致命缺陷片段的方法包括分离各种泄漏故障的方法,并定义环绕异常部分的诊断区域。所提出的技术通过使用逻辑模拟来提取定义区域的逻辑状态,并且通过定位与异常IDDQ相关的测试向量,通过将每个电路元件的比较操作定位有关的测试向量来确定是否相同具有异常IDDQ的逻辑状态在普通逻辑状态中存在。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号