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Nanocrystal growth crystalline insulators irradiated with high-current Cu ions

机译:纳米晶体生长结晶绝缘体用高电流Cu离子照射

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Negative Cu ions of 60 keV have been applied to generate metal nanocrystals embedded in insulators.Crystalline (c-),amorphous (a-)SiO_2 and a spinel oxide,MgO 2(Al_2O_3),were irradiated at various dose rates up to about 100 um A/cm~2 ,at a total dose of 3.0x10~16 ions/cm~2.In a-SiO_2,morphology of nanoparticles and the resultant optical property changed with dose rate and,at a critical condition,showed in-plane arrangement of nanocrystals.The optical property of c-SiO_2 ( alpha -quartz) was qualitatively similar to that of a-SiO_2 but the implanted region of c-SiO_2 showed different irradiation responses.The c-SiO_2 was suseptible to radiation-induced amorphization but the nanoparticle morphology was still different from a-SiO_2,suggesting a stronger depth-oriented driving force.Unlike SiO_2 ,kthe spinel oxide showed good structural stability against the implantation and no tendency of the long-range atomic rearrangement.The results indicate that the crystallinity and the relevant interactions may play an important role in the nanoparticle growth during the implantation.
机译:已经施加了60keV的负Cu离子,以产生嵌入在绝缘体中的金属纳米晶体。以各种剂量率照射晶体(C - ),无定形(A-)SiO_2和尖晶石氧化物,MgO 2(Al_2O_3),其各种剂量率高达约100 UM A / cm〜2,总剂量为3.0x10〜16离子/ cm〜2.在A-SiO_2,纳米颗粒的形态和所得光学性质的剂量率和临界条件发生变化,在平面内显示出纳米晶体的布置。C-SiO_2(α-Quartz)的光学性质与A-SiO_2的光学性质相似,但C-SiO_2的植入区域显示出不同的照射反应。C-SiO_2可容易辐射诱导的非晶化但是纳米颗粒形态仍然不同于A-SiO_2,表明更强的深度取向驱动力。kike siO_2,k型氧化丝氧化物对植入的良好结构稳定性,并且没有远程原子重排的趋势。结果表明结晶度和相关的内容步骤可能在植入过程中在纳米粒子生长中发挥重要作用。

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