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Post-irradiation annealing of dislocation microstructure and radiation-induced segreation in proton-irradiated stainless steels

机译:质子照射不锈钢脱位微观结构和辐射诱导偏析的后照射退火

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Both microstructural effects (radiation hardening) and microcompositional effects (radiation-induced segregation (RIS)) have been identified as potential contributors to irradiation-assisted stress corrosion cracking (IASCC).However,the importance of each in IASCC is unclear .In an effort to isolate their roles,post-irradiation annealing of proton-irradiated 304 L stainless steel samples has bene studied.Model simulations of post-irradiation annealing at intermediate temperatures (400-650 deg C) indicate that microstructural features such as dislocation loops are removed faster than RIS.Simulations also predict that there exist time-termperature combinations that will significantly reduce the dislocation loop population while leaving the grain boundary segregation essentially unaffected.Ultra-high purity (UHP) 304L stainless steel samples have been irradiated with 3.2 MeV protons at 360 deg C to 1.0 dpa and then annealed in-situ as thinned TEM disks in the temperature range of 500 deg C- 625 deg C for times between 20 and 60 minutes.RiS and dislocation loops were characterized before and after annealing in the same areas of each specimen.Post-irradiation anneals at 500 deg C for 45 minutes or 60 minutes resulted in no appreciable change in dislocation loop population or RIS>Annealing at 600 deg C for 20 minutes.,or 40 minutes and at 625 deg C for 40 minutes,resulted in decreasing disolocation loop densities and increasing loop size with increasing annealing time or temperature,while the amount of RIS did not change significantly fromthe pre-annealed condition.
机译:微观结构效应(辐射硬化)和微相效应(辐射诱导的偏析(RIS))被鉴定为照射辅助应力腐蚀裂纹(IASCC)的潜在贡献者。然而,每种IASCC中的重要性都不清楚。为了隔离其作用,质子辐照的304L不锈钢样品的照射后退火具有BENE研究。中间温度下的照射后退火的模型模拟表明诸如位错环等微观结构特征更快地消除比Ris.simulations还预测,存在时间 - 期末组合,即将显着降低位错环群,同时离开晶界偏析,基本上不受影响,纯度纯度(UHP)304L不锈钢样品在360时用3.2meV质子进行了3.2meV质子DEG C至1.0 DPA,然后退火原位为500°的温度范围内的变薄TEM磁盘在20至60分钟之间的时间介于20到60分钟之间的时间和位错环。在每个标本的相同区域的退火之前和之后表征在每个标本的相同区域。500℃的辐射退火45分钟或60分钟,导致没有明显的变化在位错入群体中或RIS>在600℃下退火20分钟,或40分钟,在625℃下40分钟,导致分子循环密度降低,随着退火时间或温度的增加而增加环尺寸,而且RIS从预退火的情况下没有显着变化。

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