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Interface Conduction between Conductive ReO{sub}3 Thin Film and NdBa{sub}2Cu{sub}3O{sub}6 Thin Film

机译:导电reo {sub} 3薄膜和ndba {sub} 2cu {sub} 3o {sub} 6薄膜之间的接口传导

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The Re oxide Films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200°C in Ar atmosphere and showed the order of 10{sup}(-4) Ωcm of which the value was still about 10 times as large as that of a single crystal ReO{sub}3. The temperature dependence of the resistivity revealed a metallic behavior. A superconductivity did not take place in the bilayered film of ReO{sub}3 / NdBa{sub}2Cu{sub}3O{sub}6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120K.
机译:通过RF金属靶通过RF反应溅射在石英膜上沉积RE氧膜。在AR气氛中在200℃的原位内退火的薄膜中观察到最低电阻率,并且显示了10 {sup}( - 4)Ωcm的顺序,其中该值仍然仍然大约为单晶的10倍。 Reo {sub} 3。电阻率的温度依赖性揭示了金属行为。在REO {SUB} 3 / NDBA {SUB} 2CU {SUB} 3O {SUB} 6的双层薄膜中没有发生超导膜。在界面区域中,在120K的附近观察到可能由Kondo效应引起的电阻率最小。

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