Multiscale Modeling of Mechanical Response of Quantum Nanostrnctures

摘要

A multiscale Green's function method is described for modeling the mechanical response of quantum nanostructures in semiconductors. The method accounts for the discreteness of the lattice in and around the nanostructure, and uses the continuum Green's function to model extended defects such as free surfaces in the host solid. The method is applied to calculate the displacement field due to a Ge quantum dot in a semi-infinite Si lattice. Corresponding continuum values of the displacement field are also reported.