High Performance Polymer Thin Film Transistors Array Printed on a Flexible Polycarbonate Substrate

摘要

High performance poly (3-hexylthiophene) (P3HT) thin film transistors (TFTs) array was fabricated on a polycarbonate substrate by micro-contact printing method. A thin polyimide layer (40 nm) was applied before silicon oxide deposition to improve the electrical properties of the TFT device. Also, the effects of O_2 plasma treatment on the field effect mobility and output current behaviors of the devices were investigated. By plasma treatment, the surface roughness of gate dielectric was improved which accounts for the increased field effect mobility and the hold Schottky barrier height in electrode/semiconductor interface was lowered resulting in large drain current in the device. Based on the experiments, we fabricated P3HT TFTs array with 0.025 cm~2/V·s in saturation field effect mobility and on/off current ratio of 10~3～10~4 on a polycarbonate substrate.