Quantitative modelling of nucleation kinetics in experiments for poly-Si growth on SiO_2 by hot-wire chemical vapor deposition

摘要

We apply a rate-equation pair binding model of nucletion kinetics to the nucleation of Si islands grown by hot-wire chemical vapor deposition on SiO_2 substrates.Previously,we had demonstrated an increase in grain size of polycrystalline Si films with H_2 dilution from 40 nm using 100 mTorr of 1% SiH_4 in he to 85nm with the addition of 20mTorr H_2.This increase in grain size is attributed to atomic H etching of Si monomers rather than stable Si clusters during the early stages of nucleation,decreasing the nucleation density.