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Two Different Interactions between Oxygen Vacancies and Dopant Cations for Ionic Conductivity in CaO-Doped CeO_2 Electrolyte Materials

机译:氧缺氧与掺杂剂阳离子之间的两种不同的相互作用,用于CaO掺杂CeO_2电解质材料的离子电导率

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The electrical measurement has demonstrated that conductivity of CaO-doped CeO_2 has higher activation energy for low temperature and lower activation energy for high temperature. A model with two different kinds of defect interactions between oxygen vacancy and doped cations has been used to interpret the phenomenon. Diffusion based on hopping of oxygen ions was assumed as the mechanism of electrical conduction. The analysis indicated that at high temperature free oxygen vacancies are dominant and the activation energy is only for oxygen ion hopping. At low temperature, however, oxygen vacancies associated with dopant calcium ions are dominant for high CaO content and the activation energy is the energy for hopping of an oxygen ion plus half of the association energy between one oxygen vacancy and one calcium ion. For low level doping, both free and associated oxygen vacancies are important.
机译:电气测量表明,CaO掺杂CEO_2的电导率具有更高的活化能量,用于低温和较低的活化能量,用于高温。用于氧空位和掺杂阳离子之间的两种不同类型的缺陷相互作用的模型用于解释现象。假设基于氧离子跳跃的扩散作为电传导机理。分析表明,在高温下,在高温下氧空位是显性的,并且激活能量仅用于氧别离子跳跃。然而,在低温下,与掺杂剂钙离子相关的氧空位是高CAO含量的显性,并且活化能量是用于跳过氧离子加上一个氧空位和一个钙离子之间的一半的能量。对于低水平掺杂,免费和相关的氧气空缺都很重要。

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