Comparison study for TiN films deposited from different method:chemical vapor deposition and atomic layer deposition

摘要

This paper compared two different film deposition processes for formation of TiN barrier layers,conventional TiCl_4-based chemical vapor deposition and atomic layer deposition (ALD).The 30nm thick Tin film deposited by conventional TiCl_4-based CVD at the process temperature of 600degC followed by NH_3 post-deposition anneal showed about 180mumOMEGAcm of resistivity,over 95% of step coverage for the pattern aspect ratio of 6 on 0.35 mum contact diameters,and below 2 at.% of chlorine contents in the film.Meanwhile,the films deposited by ALD at 100degC lower process temperature than CVD showed much better film properties even without post-deposition anneal.It showed lower resistivity values and lower chlorine incorporation along with better step coverage characteristics.More detailed material analysis was done by AFM,SEM,and AES.