Vanadium is an important dopant in SiC because it gives rise to donor levels near the middle of the bandgap which can be used to make the material semi-insulating, and semi-insulating material has many applications as a substrate material for high-power electronics. However, conventional means of characterizing electronic levels in the bandgap of the material require very high temperatures, in the neighborhood of 650-800°C, in order to move the Fermi level to midgap and cause ionization of the V donors. The technique of Optical Admittance Spectroscopy permits the ionization of the midgap donors using light of the appropriate. energy, and thus avoids the need for high temperatures. Using this technique we have examined several specimens of V-doped and high-resistivity 4H-SiC. We have identified levels previously associated with V, and new levels we attribute to Ti. Pinning of the Fermi level in some specimens was verified by high-temperature Hall effect measurements. SIMS measurements were used to determine impurity concentrations. IR absorption measurements were correlated with the Ti, V, and Cr concentrations determined by SIMS.
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