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PLZT Electrooptic Q-Switch for Er:Cr:YSGG Laser

机译:PLZT电气光学Q-Switch for ER:CR:YSGG激光

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Q-switching of the Er:Cr:YSGG laser at 2.79 μm is realized using electrooptic modulators of PLZT X/65/35 ceramics. The high (but slow as compared with single crystals) electrooptical effect in PLZT allowed to construct Q-switches with an aperture larger than 4x4 mm~2, small lengths of 3-6 mm, with a control voltage of 1000-1500 V. Q-switching is realized using modulators in two modes - as a λ/2 switch placed into the laser cavity at the Brewster angle avoiding reflection losses and as a λ/4 switch with higher single pass losses due to Fresnel reflections. A higher laser output was obtained using λ/2 switching. The obtained pulses has a halfwidth of 150 ns, a pulse build-up time of 1.8-2.5 μs, a single pulse energy of 10-12 mJ as compared with 30 mJ output of the laser for the free-running mode.
机译:ER的Q切换:CR:YSGG激光器在2.79μm,使用PLZT X / 65/35陶瓷的电光调制器实现。高(但慢比单晶相比)在PLZT中的电光效果允许构建呼吸孔径大于4x4 mm〜2,小长度为3-6毫米的Q-开关,控制电压为1000-1500 V.Q - 使用两种模式的调制器实现 - 作为λ/ 2交换机放置在Brewster角度的激光腔中,避免反射损耗,并且由于菲涅耳反射而具有更高的单次通过损耗的λ/ 4开关。使用λ/ 2切换获得更高的激光输出。所获得的脉冲具有150 ns的半周,脉冲积聚时间为1.8-2.5μs,与激光器的30 mj输出相比,单个脉冲能量为10-12 mj,用于自由运行模式。

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