Stress characterization of sputtered PZT films

摘要

In this work we show that stress in sputter deposited lead zirconate titanate (PZT0 films can be controlled by variation of both deposition and annealing temperatures. These films were deposited via reasctive rf magnetron sputtering using a Pb_(1.25)Zr_(.52)Ti_(.48)O_3 composite target and O_2 as a reactive gas in an Ar ambient. Variation of stress as a function of deposition and annealing temperature was characterized. The deposited film composition was determined from x-ray fluorescence measurements. There is a strong correlation between film stress, composition, and crystallographic orientation. Stress was determined from the deflection of released SiO_2/Pt cantilever beams. We show that films with a wide range of intrinsic stress can be deposited which still exhibit good piezoelectric properties, making the fabrication of reliable thin film piezoelectric actuators possible.