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Modeling of the ion-beam growth ofcovalently-bonded diamondlike materials

机译:离子束生长的建模,键合金刚石型材料

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A characteristic ion energy and substrate temperature dependence for the formation of tetrahedral amorphous carbon (ta-C), cubic boron nitride (c-BN) and related diamondlike materials by ion deposition has been experimentally observed. We present an analytical model for diamondlike film growth that describes the transient modification of the film structure by successive individual ion impact events. Each ion impact is treated as a cylindrical thermal spike with a finite initial width, taking into account energy loss and energy dissipation processes. We show that rearrangement of atoms during a cylindrical spike is the dominant mechanism leading to the formation of the diamondlike phase. The model explains quantitatively the observed ion energy dependence of the sp~3 bond fraction in ta-C, as well as the broad range of ion energies for which c-BN growth is observed.
机译:实验地观察到通过离子沉积形成四面体无定形碳(Ta-C),立方氮化物(C-BN),立方氮化物(C-BN)和相关金刚石状材料的特征离子能量和基板温度依赖性。我们提出了一种用于金刚石薄膜生长的分析模型,其通过连续的个体离子影响事件描述膜结构的瞬态改性。每个离子撞击都被视为具有有限初始宽度的圆柱形热峰值,考虑到能量损失和能量耗散过程。我们表明在圆柱形峰值期间原子的重新排列是导致模拟型相的形成的主要机理。该模型定量地解释了在TA-C中的SP〜3键级分的观察到的离子能量依赖性,以及观察到C-BN生长的宽范围的离子能量。

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