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Characterization of silicon-based insulated channels for capillary electrophoresis

机译:毛细管电泳硅基绝缘通道的表征

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A new fabrication method to produce miniaturized Transparent Insulating Channels (muTICs) is presented. The process involves Deep Reactive Ion Etching (DRIE), insulating film deposition, anodic bonding and back etching of the silicon. The muTIC process leaves optically-transparent channels that can be cooled very easily due to the thin walls, thus in principle enabling higher electric field strenghts. Because the fragile nature of thin walls limits the practical application of the muTICs, a polymer film is added to reinforce the microstructures. A muTIC design with an injection- and separation channel and containing a 100 mum long injection loop is realized and evalauted. EOF was confirmed by the use of fluorescently labeled, 3 mum diameter beads observed by a CCD camera coupled to a fluorescence microscope. Current/voltage curves were linear up to applied fields of 700 V/cm. For the first itme, silicon-based microchannels have been realized that are suitable for CE. Thus, muTICs, allow for high flexibility in the deisng of insulated channels with respect to dimensions and cross-sectional shapes for anlaytical techniques where insulating materials are required, such as CE.
机译:提出了一种产生小型化透明绝缘通道(官差)的新制造方法。该过程涉及硅的深反应离子蚀刻(DRIE),绝缘膜沉积,阳极粘接和硅的后蚀刻。刚性处理叶子光学透明的通道,其可以由于薄壁而容易地冷却,因此原则上能够实现更高的电场实力。由于薄壁的脆弱性质限制了突变的实际应用,因此加入聚合物膜以增强微结构。使用注射和分离通道的互象设计并含有100毫米长注射回路并进行评估。通过使用耦合到荧光显微镜的CCD相机观察到的荧光标记的3毫米直径珠粒证实了EOF。电流/电压曲线是线性的,施加700 V / cm的施加字段。对于第一个ITME,已经实现了适合于CE的硅基微通道。因此,致摩尔,允许相对于所需绝缘材料的尺寸和横截面的绝缘通道的横截面和横截面形状的高柔韧性,例如Ce。

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