Possible solid phase reaction between IMP Ti and Si substrate interface was studied. Analytical methods such as high resolution transmission electron microscopy (HRTEM), nano-porbe EDX and energy filter mapping were employed to identify and characterize the interfacial properties, such as interlayer thickness, diffusion profiles and plausible interface compositions, etc. In the IMP Ti/Si system, an amorphous interlayer was surprisingly observed. Compositional mapping results indicte that it may be a mixture of both Ti and Si oxides with a strong Si-containing TiO_x phase. This ultra-thin amorphous layer was shown to grow on a thin oxide layer, and can be a good indication leading to better understanding of the in-situ IMP plasma temperature during process.
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